发明授权
- 专利标题: Thin-film resistor and method for manufacturing the same
- 专利标题(中): 薄膜电阻及其制造方法
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申请号: US10171144申请日: 2002-06-13
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公开(公告)号: US06777778B2公开(公告)日: 2004-08-17
- 发明人: Kiyoshi Sato
- 申请人: Kiyoshi Sato
- 优先权: JP2001-186920 20010620
- 主分类号: H01L2702
- IPC分类号: H01L2702
摘要:
A thin-film resistor includes a resistive element with a predetermined length and width deposited on a substrate. An insulator layer is patterned so as to cover all of the resistive element except the ends in the width direction and is tapered. Electrodes are connected to respective ends of the resistive element via a plating base layer. The electrodes have a reduced resistance. The thin-film resistor can exhibit high accuracy and a small range of variation of the resistance.
公开/授权文献
- US20020197811A1 Thin-film resistor and method for manufacturing the same 公开/授权日:2002-12-26
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