发明授权
US06778430B2 Magnetic thin-film memory device for quick and stable reading data
失效
磁性薄膜记忆装置,用于快速,稳定地读取数据
- 专利标题: Magnetic thin-film memory device for quick and stable reading data
- 专利标题(中): 磁性薄膜记忆装置,用于快速,稳定地读取数据
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申请号: US09887321申请日: 2001-06-25
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公开(公告)号: US06778430B2公开(公告)日: 2004-08-17
- 发明人: Hideto Hidaka
- 申请人: Hideto Hidaka
- 优先权: JP2000-288642(P) 20000922; JP2001-020277(P) 20010129
- 主分类号: G11C1114
- IPC分类号: G11C1114
摘要:
An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation delays of the read word lines and accelerate the data read operation. Activation of each read word line is controlled by a write word line in accordance with a row selection result in a hierarchical manner. A word-line-current control circuit forms and cuts off the current path of a write word line correspondingly to data write and data read.
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