Invention Grant
- Patent Title: Plasma deposition device for forming thin film
- Patent Title (中): 用于形成薄膜的等离子体沉积装置
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Application No.: US09815160Application Date: 2001-03-22
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Publication No.: US06779482B2Publication Date: 2004-08-24
- Inventor: Osamu Sakai , Satoshi Okamoto , Toshio Akai
- Applicant: Osamu Sakai , Satoshi Okamoto , Toshio Akai
- Priority: JP2000-081464 20000323; JP2001-009963 20010118
- Main IPC: C23C1600
- IPC: C23C1600

Abstract:
A plasma deposition device 1 comprises electrodes 13 mounted on an electrode substrate 11, gas introducing holes 12 provided between said electrodes 13 for introducing material gas G to the interior, a deposition substrate 30 provided to oppose to said electrodes 13 from a predetermined distance d, and a power source 60 generating plasma from said material gas by providing energy thereto, wherein material gas G is resolved to active species R deposited on said deposition substrate 30, characterized in applying voltage to adjacent electrodes 13 so as to generate discharge DC.
Public/Granted literature
- US20020007793A1 Plasma deposition device for forming thin film Public/Granted day:2002-01-24
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