Invention Grant
US06779482B2 Plasma deposition device for forming thin film 有权
用于形成薄膜的等离子体沉积装置

Plasma deposition device for forming thin film
Abstract:
A plasma deposition device 1 comprises electrodes 13 mounted on an electrode substrate 11, gas introducing holes 12 provided between said electrodes 13 for introducing material gas G to the interior, a deposition substrate 30 provided to oppose to said electrodes 13 from a predetermined distance d, and a power source 60 generating plasma from said material gas by providing energy thereto, wherein material gas G is resolved to active species R deposited on said deposition substrate 30, characterized in applying voltage to adjacent electrodes 13 so as to generate discharge DC.
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