发明授权
- 专利标题： Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
- 专利标题（中）： 温度测量方法和装置，成膜厚度的测量方法，用于晶片的成型薄膜温度计的厚度的测量装置
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申请号： US10206186申请日： 2002-07-29
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公开(公告)号： US06780657B2公开(公告)日： 2004-08-24
- 发明人: Tomomi Ino , Akira Soga , Yoshiaki Akama
- 申请人： Tomomi Ino , Akira Soga , Yoshiaki Akama
- 优先权： JP10-070812 19980319; JP10-262894 19980917; JP10-275350 19980929; JP10-301108 19981022
- 主分类号： H01L2166
- IPC分类号： H01L2166
摘要：
A temperature measuring apparatus, comprises a light splitting section for splitting the light radiated from a substrate into plural light components having wavelengths over a predetermined wavelength region, a detection section for detecting the intensities of the light components obtained by the light splitting section, an integrated value calculating section for calculating an integrated value of radiation intensity by cumulatively adding the intensities of the light components detected by the detecting section, and a surface temperature calculating section for calculating the surface temperature of the substrate from the integrated value, on the basis of reference data representing the relation between the temperature and the integrated value.