Invention Grant
- Patent Title: Thinned semiconductor wafer and die and corresponding method
- Patent Title (中): 薄膜半导体晶片和芯片及相应的方法
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Application No.: US10236619Application Date: 2002-09-06
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Publication No.: US06780733B2Publication Date: 2004-08-24
- Inventor: Marc Chason , Paul Brazis , Krishna Kalyanasundaram , Daniel Gamota
- Applicant: Marc Chason , Paul Brazis , Krishna Kalyanasundaram , Daniel Gamota
- Main IPC: H01L21301
- IPC: H01L21301

Abstract:
A wafer (10) having integrated circuit elements formed therein is thinned and a first carrier (41) is adhered thereto. The first carrier (41) facilitates handling of the thinned wafer (30). A second carrier (51) is then adhered as well and the various integrated circuits are singulated to yield a plurality of thinned die (81). Once the thinned die is mounted to a desired substrate (91), the first carrier (41) is readily removed. In one embodiment, the first carrier (41) has an adhesive that becomes less adherent when exposed to a predetermined stimulus (such as a given temperature range or a given frequency range of photonic energy). Such thinned die (or modules containing such die) are readily amenable to stacking in order to achieve significantly increased circuit densities.
Public/Granted literature
- US20040048445A1 Thinned semiconductor wafer and die and corresponding method Public/Granted day:2004-03-11
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