A semiconductor memory device employs a power supply system in which a first power supply voltage supplied to a cell area is separated from a second power supply voltage supplied to a peripheral circuit area. Particularly, during a wafer burn-in test operation mode, the first power supply voltage supplied to the cell area is higher than the second power supply voltage supplied to the peripheral circuit area. If a wafer burn-in test operation is performed under the second power supply system, a DC current path formed by a latch-up phenomenon of a memory cell can be shut off.