Invention Grant
- Patent Title: Field emission element and method for manufacturing the same
- Patent Title (中): 场发射元件及其制造方法
-
Application No.: US10405703Application Date: 2003-04-03
-
Publication No.: US06784604B2Publication Date: 2004-08-31
- Inventor: Takahiro Niiyama , Mitsuru Tanaka , Yuji Obara
- Applicant: Takahiro Niiyama , Mitsuru Tanaka , Yuji Obara
- Priority: JP2002-105871 20020408
- Main IPC: H01J102
- IPC: H01J102

Abstract:
A field emission element includes a substrate, a cathode conductor disposed on the substrate, an insulating layer structure on the cathode conductor that has a first insulating layer on the cathode conductor and a second insulating layer on the first insulating layer, a gate disposed on the second insulating layer, a gate hole provided through the gate and the insulating layer structure to expose a portion of the cathode conductor therethrough, and an emitter on the exposed portion of the cathode conductor in the gate hole. The first insulating layer is covered by the second insulating layer at a side surface of the gate hole and a dielectric constant of the first insulating layer is different from that of the second insulating layer.
Public/Granted literature
- US20030189396A1 Field emission element and method for manufacturing the same Public/Granted day:2003-10-09
Information query