发明授权
- 专利标题: Electrostatic chuck and substrate processing apparatus
- 专利标题(中): 静电吸盘和基板处理装置
-
申请号: US10057804申请日: 2002-01-25
-
公开(公告)号: US06785115B2公开(公告)日: 2004-08-31
- 发明人: Hideyoshi Tsuruta , Satoru Yamada , Kiyoshi Nashimoto , Naoki Miyazaki
- 申请人: Hideyoshi Tsuruta , Satoru Yamada , Kiyoshi Nashimoto , Naoki Miyazaki
- 优先权: JP2001-019487 20010129
- 主分类号: H02N2300
- IPC分类号: H02N2300
摘要:
An electrostatic chuck is provided, having an insulation layer including a mount plane on which a wafer is mounted, an inner electrode provided in the insulation layer, and projecting portions protruding from the mount plane which include contact planes that contact the wafer. A backside gas flows into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain the temperature uniformity of the wafer. The total areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to the area of the inner electrode, and the heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.
公开/授权文献
- US20020159217A1 Electrostatic chuck and substrate processing apparatus 公开/授权日:2002-10-31
信息查询