发明授权
- 专利标题: Positive photoresist composition for far ultraviolet exposure
- 专利标题(中): 用于远紫外线曝光的正光致抗蚀剂组合物
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申请号: US09620708申请日: 2000-07-20
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公开(公告)号: US06787283B1公开(公告)日: 2004-09-07
- 发明人: Toshiaki Aoai , Kenichiro Sato , Kunihiko Kodama
- 申请人: Toshiaki Aoai , Kenichiro Sato , Kunihiko Kodama
- 优先权: JPP.11-207958 19990722; JPP.11-234239 19990820; JPP.11-234240 19990820
- 主分类号: G03F7039
- IPC分类号: G03F7039
摘要:
Disclosed is a positive photoresist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in alkali, containing a repeating unit having a group represented by the following formula (I): wherein R1 represents hydrogen atom or an alkyl group having from 1 to 4 carbon atoms, which may have a substituent, R1 to R7, which may be the same or different, each represents hydrogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent or an alkenyl group which may have a substituent, provided that at least one of R6 and R7 is a group exclusive of hydrogen atom and R6 and R7 may combine to form a ring, and m and n each independently represents 0 or 1, provided that m and n are not 0 at the same time. The positive photoresist composition can further comprise a fluorine-containing and/or silicon-containing surfactant and at least one first solvent selected from propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate and 3-ethoxypropionate.
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