发明授权
- 专利标题: Dielectric element and method for fabricating the same
- 专利标题(中): 介电元件及其制造方法
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申请号: US10458199申请日: 2003-06-11
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公开(公告)号: US06787412B2公开(公告)日: 2004-09-07
- 发明人: Akira Hashimoto , Yoshimi Sato , Atsushi Kawakami , Hideya Kobari , Tetsuya Nakajima
- 申请人: Akira Hashimoto , Yoshimi Sato , Atsushi Kawakami , Hideya Kobari , Tetsuya Nakajima
- 优先权: JP11-321303 19991111
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.
公开/授权文献
- US20030209747A1 Dielectric element and method for fabricating the same 公开/授权日:2003-11-13
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