Invention Grant
- Patent Title: Dielectric element and method for fabricating the same
- Patent Title (中): 介电元件及其制造方法
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Application No.: US10458199Application Date: 2003-06-11
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Publication No.: US06787412B2Publication Date: 2004-09-07
- Inventor: Akira Hashimoto , Yoshimi Sato , Atsushi Kawakami , Hideya Kobari , Tetsuya Nakajima
- Applicant: Akira Hashimoto , Yoshimi Sato , Atsushi Kawakami , Hideya Kobari , Tetsuya Nakajima
- Priority: JP11-321303 19991111
- Main IPC: H01L218242
- IPC: H01L218242

Abstract:
It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.
Public/Granted literature
- US20030209747A1 Dielectric element and method for fabricating the same Public/Granted day:2003-11-13
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