Invention Grant
- Patent Title: Apparatus for method for immersion lithography
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Application No.: US10278962Application Date: 2002-10-22
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Publication No.: US06788477B2Publication Date: 2004-09-07
- Inventor: Burn Jeng Lin
- Applicant: Burn Jeng Lin
- Main IPC: G02B702
- IPC: G02B702

Abstract:
An apparatus for immersion lithography that includes an imaging lens which has a front surface, a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.
Public/Granted literature
- US20040075895A1 Apparatus for method for immersion lithography Public/Granted day:2004-04-22
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