• Patent Title: Apparatus for method for immersion lithography
  • Application No.: US10278962
    Application Date: 2002-10-22
  • Publication No.: US06788477B2
    Publication Date: 2004-09-07
  • Inventor: Burn Jeng Lin
  • Applicant: Burn Jeng Lin
  • Main IPC: G02B702
  • IPC: G02B702
Apparatus for method for immersion lithography
Abstract:
An apparatus for immersion lithography that includes an imaging lens which has a front surface, a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.
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