发明授权
- 专利标题： Nonvolatile semiconductor storage device and data erasing method
- 专利标题（中）： 非易失性半导体存储器件和数据擦除方法
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申请号： US10454630申请日： 2003-06-05
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公开(公告)号： US06788580B2公开(公告)日： 2004-09-07
- 发明人: Satoshi Takahashi
- 申请人： Satoshi Takahashi
- 主分类号： G11C1606
- IPC分类号： G11C1606
摘要：
A nonvolatile semiconductor storage device includes a memory cell array and a reference cell providing a reference level with which data of the memory cell array is compared with so as to determine whether the data of the memory cell array is in an over-programmed state.
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