A method of programming a row of antifuse memory cells includes breaking down at least N antifuse elements in the memory cells. The breakdown includes the application of a breakdown voltage to the anode of each antifuse element. The antifuse elements are broken down sequentially by groups of P antifuse elements, with P being less than N and at least equal to 1. The antifuse elements of a same group simultaneously receive the breakdown voltage. The breakdown of a next group of antifuse elements immediately takes place after the breakdown of a previous group of antifuse elements.