Integration of two memory types on the same integrated circuit

发明授权

US06790727B2 Integration of two memory types on the same integrated circuit 有权

标题翻译：在同一集成电路上集成两种存储器类型

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专利标题： Integration of two memory types on the same integrated circuit
专利标题（中）： 在同一集成电路上集成两种存储器类型
申请号： US10348267

申请日： 2003-01-21
公开(公告)号： US06790727B2

公开(公告)日： 2004-09-14
发明人: Robert E. Jones, Jr. , Bruce E. White, Jr.
申请人： Robert E. Jones, Jr. , Bruce E. White, Jr.
主分类号： H01L21336
IPC分类号： H01L21336

Integration of two memory types on the same integrated circuit

摘要：

Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.

摘要（中）：

非易失性存储器（NVM）和动态纳米晶体存储器（DNM）都集成在半导体衬底上。具有嵌入式纳米晶体或离散存储元件的控制栅极和控制电介质形成在不同厚度的隧道电介质上以形成两个存储器。源极和漏极区域形成在与隧道电介质相邻的半导体衬底内。通过添加最小的加工步骤，可以使用各种方法形成薄的隧道氧化物和厚的隧道氧化物。

公开/授权文献

US20030132500A1 Integration of two memory types on the same integrated circuit 公开/授权日：2003-07-17

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