发明授权
- 专利标题： Semiconductor substrate for a one-chip electronic device and related manufacturing method
- 专利标题（中）： 一种单芯片电子器件半导体衬底及相关制造方法
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申请号： US10259580申请日： 2002-09-30
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公开(公告)号： US06790751B2公开(公告)日： 2004-09-14
- 发明人: Kazuhiro Tsuruta , Nobuaki Kawahara
- 申请人： Kazuhiro Tsuruta , Nobuaki Kawahara
- 优先权： JP2001-308496 20011004; JP2002-009220 20020117
- 主分类号： H01L21425
- IPC分类号： H01L21425
摘要：
A plurality of grooves, each having a depth of 10 &mgr;m or more and arranged adjacent to each other, are formed at a predetermined portion of a semiconductor substrate where a passive element is formed. Then, a thermal oxidation treatment is performed to let an oxide film grow from an inside surface of each groove so as to fill an inside space of the groove with a thermal oxide film thus grown and turn an entire portion intervening between adjacent grooves into a thermal oxide layer. Each groove has a width of 1 &mgr;m or less, and a width of a semiconductor material intervening between two adjacent grooves is 81.8% or more with respect to the groove width.