发明授权
- 专利标题: Lithographic contact elements
- 专利标题(中): 光刻接触元件
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申请号: US09777348申请日: 2001-02-05
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公开(公告)号: US06791176B2公开(公告)日: 2004-09-14
- 发明人: Gaetan L. Mathieu , Benjamin N. Eldridge , Gary W. Grube
- 申请人: Gaetan L. Mathieu , Benjamin N. Eldridge , Gary W. Grube
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
A method of forming an interconnection, including a spring contact element, by lithographic techniques. In one embodiment, the method includes applying a masking material over a first portion of a substrate, the masking material having an opening which will define a first portion of a spring structure, depositing a structure material (e.g., conductive material) in the opening, and overfilling the opening with the structure material, removing a portion of the structure material, and removing a first portion of the masking material. In this embodiment, at least a portion of the first portion of the spring structure is freed of masking material. In one aspect of the invention, the method includes planarizing the masking material layer and structure material to remove a portion of the structure material. In another aspect, the spring structure formed includes one of a post portion, a beam portion, and a tip structure portion.
公开/授权文献
- US20010039109A1 Lithographic contact elements 公开/授权日:2001-11-08
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