Tunneling barrier material for a magnetic recording head

发明授权

US06791806B1 Tunneling barrier material for a magnetic recording head 有权

标题翻译：用于磁记录头的隧道阻隔材料

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专利标题： Tunneling barrier material for a magnetic recording head
专利标题（中）： 用于磁记录头的隧道阻隔材料
申请号： US10216515

申请日： 2002-08-09
公开(公告)号： US06791806B1

公开(公告)日： 2004-09-14
发明人: Zheng Gao , Sining Mao , Khoung Tran , Janusz Nowak , Jian Chen
申请人： Zheng Gao , Sining Mao , Khoung Tran , Janusz Nowak , Jian Chen
主分类号： G11B539
IPC分类号： G11B539

Tunneling barrier material for a magnetic recording head

摘要：

A tunneling magnetoresistive stack configured to operate in a current-perpendicular-to-plane mode has a plurality of layers including a barrier layer. The TMR stack has a plurality of layers including a barrier layer, wherein the barrier layer is comprised of an insulating material selected from a group consisting of HfO, HfAlO, ZrO, TiO, TaO or NdO. The TMR stack exhibits a low resistance-area (RA) product, a stable magnetoresistive (MR) ratio, a lower RA product, a higher breakdown voltage of the TMR stack and enhanced thermal stability.

摘要（中）：

构造成在电流垂直于平面模式下工作的隧道磁阻堆叠具有包括阻挡层的多个层。 TMR叠层具有包括阻挡层的多个层，其中阻挡层由选自HfO，HfAlO，ZrO，TiO，TaO或NdO的绝缘材料构成。 TMR堆叠表现出低电阻面积（RA）产品，稳定的磁阻（MR）比，较低的RA乘积，TMR堆叠的较高击穿电压和增强的热稳定性。

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