发明授权
- 专利标题: Wafer thinning using magnetic mirror plasma
- 专利标题(中): 使用磁镜等离子体进行晶圆变薄
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申请号: US10390977申请日: 2003-03-18
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公开(公告)号: US06794272B2公开(公告)日: 2004-09-21
- 发明人: Terry R. Turner , James D. Spain , Richard M. Banks
- 申请人: Terry R. Turner , James D. Spain , Richard M. Banks
- 主分类号: H01L2178
- IPC分类号: H01L2178
摘要:
A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.
公开/授权文献
- US20030186513A1 Wafer thinning using magnetic mirror plasma 公开/授权日:2003-10-02