发明授权
US06794666B2 Electron emission lithography apparatus and method using a selectively grown carbon nanotube
失效
电子发射光刻设备和使用选择性生长的碳纳米管的方法
- 专利标题: Electron emission lithography apparatus and method using a selectively grown carbon nanotube
- 专利标题(中): 电子发射光刻设备和使用选择性生长的碳纳米管的方法
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申请号: US10160102申请日: 2002-06-04
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公开(公告)号: US06794666B2公开(公告)日: 2004-09-21
- 发明人: Won-bong Choi , In-kyeong Yoo
- 申请人: Won-bong Choi , In-kyeong Yoo
- 优先权: KR2001-31125 20010604
- 主分类号: G21G500
- IPC分类号: G21G500
摘要:
An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
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