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US06794666B2 Electron emission lithography apparatus and method using a selectively grown carbon nanotube 失效
电子发射光刻设备和使用选择性生长的碳纳米管的方法

  • Patent Title: Electron emission lithography apparatus and method using a selectively grown carbon nanotube
  • Patent Title (中): 电子发射光刻设备和使用选择性生长的碳纳米管的方法
  • Application No.: US10160102
    Application Date: 2002-06-04
  • Publication No.: US06794666B2
    Publication Date: 2004-09-21
  • Inventor: Won-bong ChoiIn-kyeong Yoo
  • Applicant: Won-bong ChoiIn-kyeong Yoo
  • Priority: KR2001-31125 20010604
  • Main IPC: G21G500
  • IPC: G21G500
Electron emission lithography apparatus and method using a selectively grown carbon nanotube
Abstract:
An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
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