Invention Grant
US06794666B2 Electron emission lithography apparatus and method using a selectively grown carbon nanotube
失效
电子发射光刻设备和使用选择性生长的碳纳米管的方法
- Patent Title: Electron emission lithography apparatus and method using a selectively grown carbon nanotube
- Patent Title (中): 电子发射光刻设备和使用选择性生长的碳纳米管的方法
-
Application No.: US10160102Application Date: 2002-06-04
-
Publication No.: US06794666B2Publication Date: 2004-09-21
- Inventor: Won-bong Choi , In-kyeong Yoo
- Applicant: Won-bong Choi , In-kyeong Yoo
- Priority: KR2001-31125 20010604
- Main IPC: G21G500
- IPC: G21G500

Abstract:
An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
Public/Granted literature
- US20020182542A1 Electron emission lithography apparatus and method using a selectively grown carbon nanotube Public/Granted day:2002-12-05
Information query