Invention Grant
US06794704B2 Method for enhancing electrode surface area in DRAM cell capacitors
失效
提高DRAM单元电容器电极表面积的方法
- Patent Title: Method for enhancing electrode surface area in DRAM cell capacitors
- Patent Title (中): 提高DRAM单元电容器电极表面积的方法
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Application No.: US10050390Application Date: 2002-01-16
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Publication No.: US06794704B2Publication Date: 2004-09-21
- Inventor: Donald L. Yates , Garry A. Mercaldi , James J. Hofmann
- Applicant: Donald L. Yates , Garry A. Mercaldi , James J. Hofmann
- Main IPC: H01L27108
- IPC: H01L27108

Abstract:
Lower electrodes of capacitors composed of a texturizing underlayer and a conductive material overlayer are provided. The lower electrodes have an upper roughened surface. In one embodiment, the texturizing layer is composed of porous or relief nanostructures comprising a polymeric material, for example, silicon oxycarbide. In another embodiment, the texturizing underlayer is in the form of surface dislocations composed of annealed first and second conductive metal layers, and the conductive metal overlayer is agglomerated onto the surface dislocations as nanostructures in the form of island clusters.
Public/Granted literature
- US20030134436A1 Method for enhancing electrode surface area in DRAM cell capacitors Public/Granted day:2003-07-17
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