发明授权
US06795456B2 157 nm laser system and method for multi-layer semiconductor failure analysis
失效
157 nm激光系统和多层半导体故障分析方法
- 专利标题： 157 nm laser system and method for multi-layer semiconductor failure analysis
- 专利标题（中）： 157 nm激光系统和多层半导体故障分析方法
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申请号： US09733874申请日： 2000-12-08
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公开(公告)号： US06795456B2公开(公告)日： 2004-09-21
- 发明人: Michael J. Scaggs
- 申请人： Michael J. Scaggs
- 主分类号： H05B700
- IPC分类号： H05B700
摘要：
A failure analysis system and method for multi-layer semiconductor devices, including a molecular fluorine laser system for producing a 157 nm beam and an imaging system for imaging the beam onto the semiconductor device. The laser beam etches away one or more top (passivation) layers to expose layers disposed underneath. Circuitry formed in exposed layers can then be tested.
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