发明授权
- 专利标题： Distributed feedback type semiconductor laser device
- 专利标题（中）： 分布式反馈型半导体激光器件
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申请号： US09482099申请日： 2000-01-13
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公开(公告)号： US06795466B1公开(公告)日： 2004-09-21
- 发明人: Kiyoshi Takei , Nong Chen , Yoshiaki Watanabe , Kiyofumi Chikuma
- 申请人： Kiyoshi Takei , Nong Chen , Yoshiaki Watanabe , Kiyofumi Chikuma
- 优先权： JP11-038281 19990217
- 主分类号： H01S500
- IPC分类号： H01S500
摘要：
A DFB type semiconductor laser device including a laser substrate, a grating layer, an insulating layer and an electrode layer, which are laminated in the given order. The insulating layer includes a through groove or grooves extending to the grating layer in a direction in which a resonator of the laser device is formed, and the electrode layer contacts the grating layer and a clad layer.
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