Invention Grant
US06797029B2 Process facility having at least two physical units each having a reduced density of contaminating particles with respect to the surroundings 有权
具有至少两个物理单元的处理设备各自相对于周围环境具有降低的污染颗粒密度

  • Patent Title: Process facility having at least two physical units each having a reduced density of contaminating particles with respect to the surroundings
  • Patent Title (中): 具有至少两个物理单元的处理设备各自相对于周围环境具有降低的污染颗粒密度
  • Application No.: US10330444
    Application Date: 2002-12-27
  • Publication No.: US06797029B2
    Publication Date: 2004-09-28
  • Inventor: Kay LedererSteffen Hornig
  • Applicant: Kay LedererSteffen Hornig
  • Priority: DE10164175 20011227
  • Main IPC: B01D4600
  • IPC: B01D4600
Process facility having at least two physical units each having a reduced density of contaminating particles with respect to the surroundings
Abstract:
In a process facility for producing semiconductor wafers, a third physical unit is configured between two physical units that produce mini environments. The third physical unit has a laminar flow at right angles to the laminar flows of the two physical units and is operated with a slightly higher flow velocity. According to the Bernoulli equation, the static pressure in the third physical unit is therefore lower than in the surrounding two physical units. Advantageously, therefore, no contamination from the more highly loaded one of the two physical units passes over into the lesser loaded one of the two physical units.
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