发明授权
- 专利标题： Method of forming silicon oxide layer
- 专利标题（中）： 形成氧化硅层的方法
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申请号： US08979259申请日： 1997-11-26
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公开(公告)号： US06797323B1公开(公告)日： 2004-09-28
- 发明人: Akihide Kashiwagi , Kazuhiko Tokunaga , Toshihiko Suzuki , Hideki Kimura , Toyotaka Kataoka , Atsushi Suzuki , Shinji Tanaka
- 申请人： Akihide Kashiwagi , Kazuhiko Tokunaga , Toshihiko Suzuki , Hideki Kimura , Toyotaka Kataoka , Atsushi Suzuki , Shinji Tanaka
- 优先权： JPP08-335065 19961129; JPP09-057691 19970312; JPP09-086806 19970404; JPP09-090766 19970409; JPP09-112338 19970430; JPP09-278977 19971013
- 主分类号： C23C1640
- IPC分类号： C23C1640
摘要：
A method of forming a silicon oxide layer comprising initiating formation of a silicon oxide layer on a surface of a silicon layer by an oxidation method using wet gas at an ambient temperature at which no silicon atom is eliminated from the surface of the silicon layer, and then, forming the silicon oxide layer up to a predetermined thickness by an oxidation method using wet gas.