发明授权
- 专利标题: Method for producing boride thin films
- 专利标题(中): 硼化物薄膜的制造方法
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申请号: US10395892申请日: 2003-03-25
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公开(公告)号: US06797341B2公开(公告)日: 2004-09-28
- 发明人: Xianghui Zeng , Alexej Pogrebnyakov , Xiaoxing Xi , Joan M. Redwing , Zi-Kui Liu , Darrell G. Schlom
- 申请人: Xianghui Zeng , Alexej Pogrebnyakov , Xiaoxing Xi , Joan M. Redwing , Zi-Kui Liu , Darrell G. Schlom
- 主分类号: B05D300
- IPC分类号: B05D300
摘要:
Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.
公开/授权文献
- US20030219911A1 Method for producing boride thin films 公开/授权日:2003-11-27
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