发明授权
- 专利标题: Method and apparatus for fabricating electronic device
- 专利标题(中): 用于制造电子设备的方法和装置
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申请号: US10259510申请日: 2002-09-30
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公开(公告)号: US06797545B2公开(公告)日: 2004-09-28
- 发明人: Warren M. Farnworth , Kevin G. Duesman , Alan G. Wood
- 申请人: Warren M. Farnworth , Kevin G. Duesman , Alan G. Wood
- 主分类号: H10L2182
- IPC分类号: H10L2182
摘要:
Logic circuitry formed in street areas between adjacent fabricated electronic devices may be used as auxiliary or redundant components to salvage one or more otherwise defective devices. Logic circuitry is selectively coupled to the defective device(s) to directly replace or facilitate the replacement of defective components on one or more fabricated devices, thereby resulting in a single operable electronic device. The invention may be used to increase the production yield of electronic devices, particularly, semiconductor integrated circuits. The invention permits the fabrication of discretionary wiring during the normal metalization of semiconductor layers to interconnect electronic devices at the same time as the formation of the normal wiring/circuitry of the devices.
公开/授权文献
- US20030054592A1 Method and apparatus for fabricating electronic device 公开/授权日:2003-03-20
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