An infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 &mgr;m having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectionally oriented layer. Distortion of the single-crystalline layer or a unidirectionally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge varies with changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5.