A method of a read scheme for a non-volatile memory cell. The non-volatile memory cell includes a substrate, a source, a drain and a gate above a channel separated by a nonconducting charge trapping material sandwiched between first and second insulating layers. The method applies a first positive drain-to-source bias, a second positive source-to-substrate bias, and a third positive gate-to-source bias to read the source-side charges trapped in the trapping material near the source side.