发明授权
- 专利标题: Addressing of memory matrix
- 专利标题(中): 存储矩阵的寻址
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申请号: US09899093申请日: 2001-07-06
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公开(公告)号: US06804138B2公开(公告)日: 2004-10-12
- 发明人: Michael O. Thompson , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson , Göran Gustafsson
- 申请人: Michael O. Thompson , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson , Göran Gustafsson
- 优先权: NO20003508 20000707
- 主分类号: G11C1122
- IPC分类号: G11C1122
摘要:
In a method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array, a potential on selected word and bit lines is controlled to approach or coincide with one of n predefined potential levels and the potentials on all word and bit lines are controlled in time according to a protocol such that word lines are sequentially latched to potentials selected among nWORD potentials, while the bit lines are either latched sequentially to potentials selected among nBIT potentials, or during a certain period of a timing sequence given by the protocol connected to circuitry for detecting charges flowing between a bit line or bit lines and cells connecting thereto. This timing sequence is provided with a read cycle during which charges flowing between the selected bit line or bit lines connecting thereto are detected and a “refresh/write cycle” during which the polarization of the cells connecting with selected word and bit lines are brought to correspond with a set of predetermined values.
公开/授权文献
- US20020060923A1 Addressing of memory matrix 公开/授权日:2002-05-23
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