发明授权
- 专利标题： Mask pattern magnification correction method, magnification correction apparatus, and mask structure
- 专利标题（中）： 掩模图案放大校正方法，倍率校正装置和掩模结构
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申请号： US10176614申请日： 2002-06-24
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公开(公告)号： US06804323B2公开(公告)日： 2004-10-12
- 发明人: Akira Moriya , Takeshi Miyachi , Shinichi Hara , Toshinobu Tokita
- 申请人： Akira Moriya , Takeshi Miyachi , Shinichi Hara , Toshinobu Tokita
- 优先权： JP2001/190809 20010625
- 主分类号： G21K500
- IPC分类号： G21K500
摘要：
A method of correcting a magnification of a mask pattern formed on a mask substrate. The method includes applying forces to four pressurizing points of an outer periphery of an approximately ring-shaped frame, which supports the mask substrate and has a rectangular window, on substantially extended lines of two diagonal lines of the rectangular window, and adjusting at least an angle, to the extended lines, of a vector of the forces applied to each of the pressurizing points.
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