发明授权
- 专利标题： Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation
- 专利标题（中）： 通过光照射在非晶硅膜上结晶生产多晶硅膜的方法
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申请号： US10059203申请日： 2002-01-31
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公开(公告)号： US06806099B2公开(公告)日： 2004-10-19
- 发明人: Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
- 申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
- 优先权： JP2001-305927 20011002
- 主分类号： G01R3126
- IPC分类号： G01R3126
摘要：
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
公开/授权文献
- US20030064571A1 Process for producing polysilicon film 公开/授权日：2003-04-03