发明授权
- 专利标题： Tantalum oxide film, use thereof, process for forming the same and composition
- 专利标题（中）： 氧化钽膜，其用途，其形成方法和组成
-
申请号： US10181778申请日： 2002-07-22
-
公开(公告)号： US06806210B2公开(公告)日： 2004-10-19
- 发明人: Hiroshi Shiho , Hitoshi Kato , Sachiko Hashimoto , Isamu Yonekura , Yasuo Matsuki
- 申请人： Hiroshi Shiho , Hitoshi Kato , Sachiko Hashimoto , Isamu Yonekura , Yasuo Matsuki
- 优先权： JP2000-353898 20001121; JP2001-045379 20010221
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.
公开/授权文献
信息查询
