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US06806228B2 Low temperature synthesis of semiconductor fibers 有权
低温合成半导体纤维

Low temperature synthesis of semiconductor fibers
摘要:
A method of synthesizing semiconductor fibers by placement of gallium or indium metal on a desired substrate, placing the combination in a low pressure chamber at a vacuum from 100 mTorr to one atmosphere pressure in an atmosphere containing desired gaseous reactants, raising the temperature of the metal to a few degrees above its melting point by microwave excitation, whereby the reactants form fibers of the desired length.
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