发明授权
US06806653B2 Method and structure to segment RF coupling to silicon electrode 有权
RF耦合到硅电极的方法和结构

  • 专利标题: Method and structure to segment RF coupling to silicon electrode
  • 专利标题(中): RF耦合到硅电极的方法和结构
  • 申请号: US10355203
    申请日: 2003-01-31
  • 公开(公告)号: US06806653B2
    公开(公告)日: 2004-10-19
  • 发明人: Eric J. StrangAndrej S. Mitrovic
  • 申请人: Eric J. StrangAndrej S. Mitrovic
  • 主分类号: H01J724
  • IPC分类号: H01J724
Method and structure to segment RF coupling to silicon electrode
摘要:
An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.
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