A magnetic memory includes a magnetoresistance effect element having a magnetic recording layer, a first wiring extending in a first direction on or below the magnetoresistance effect element, a covering layer provided on at least both sides of the first wiring, and a writing circuit configured to pass a current through the first wiring in order to record information in the magnetic recording layer by a magnetic field generated by the current. The covering layer is made of magnetic material and has a uniaxial anisotropy in the first direction, along which a magnetization of the covering layer occurs.