发明授权
- 专利标题: Magnetic memory
- 专利标题(中): 磁记忆
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申请号: US10769757申请日: 2004-02-03
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公开(公告)号: US06807094B2公开(公告)日: 2004-10-19
- 发明人: Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
- 申请人: Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
- 优先权: JP2002-007877 20020116
- 主分类号: G11C1115
- IPC分类号: G11C1115
摘要:
A magnetic memory includes a magnetoresistance effect element having a magnetic recording layer, a first wiring extending in a first direction on or below the magnetoresistance effect element, a covering layer provided on at least both sides of the first wiring, and a writing circuit configured to pass a current through the first wiring in order to record information in the magnetic recording layer by a magnetic field generated by the current. The covering layer is made of magnetic material and has a uniaxial anisotropy in the first direction, along which a magnetization of the covering layer occurs.
公开/授权文献
- US20040156232A1 Magnetic memory 公开/授权日:2004-08-12