发明授权
US06807108B2 Semiconductor memory device having select circuit 失效
具有选择电路的半导体存储器件

  • 专利标题: Semiconductor memory device having select circuit
  • 专利标题(中): 具有选择电路的半导体存储器件
  • 申请号: US10266692
    申请日: 2002-10-09
  • 公开(公告)号: US06807108B2
    公开(公告)日: 2004-10-19
  • 发明人: Yukiko MaruyamaTakashi Itou
  • 申请人: Yukiko MaruyamaTakashi Itou
  • 优先权: JP2002-103970 20020405
  • 主分类号: G11C1134
  • IPC分类号: G11C1134
Semiconductor memory device having select circuit
摘要:
An input buffer circuit includes a first input buffer and a second input buffer. The first input buffer receives an external data signal and a reference potential to output an internal data signal. The second input buffer receives external data signals complementary to each other to output the internal data signal. The input buffer circuit causes either the first or second input buffer to operate in response to a control signal outputted from a control circuit. Due to this, this semiconductor memory device can correspond to various types of data processing systems.
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