发明授权
- 专利标题: Semiconductor memory device having select circuit
- 专利标题(中): 具有选择电路的半导体存储器件
-
申请号: US10266692申请日: 2002-10-09
-
公开(公告)号: US06807108B2公开(公告)日: 2004-10-19
- 发明人: Yukiko Maruyama , Takashi Itou
- 申请人: Yukiko Maruyama , Takashi Itou
- 优先权: JP2002-103970 20020405
- 主分类号: G11C1134
- IPC分类号: G11C1134
摘要:
An input buffer circuit includes a first input buffer and a second input buffer. The first input buffer receives an external data signal and a reference potential to output an internal data signal. The second input buffer receives external data signals complementary to each other to output the internal data signal. The input buffer circuit causes either the first or second input buffer to operate in response to a control signal outputted from a control circuit. Due to this, this semiconductor memory device can correspond to various types of data processing systems.
公开/授权文献
- US20030189854A1 Semiconductor memory device having select circuit 公开/授权日:2003-10-09
信息查询