发明授权
US06808749B2 Thin film forming method, solution and apparatus for use in the method, and electronic device fabricating method 失效
用于该方法的薄膜形成方法,溶液和装置以及电子器件制造方法

  • 专利标题: Thin film forming method, solution and apparatus for use in the method, and electronic device fabricating method
  • 专利标题(中): 用于该方法的薄膜形成方法,溶液和装置以及电子器件制造方法
  • 申请号: US10267639
    申请日: 2002-10-10
  • 公开(公告)号: US06808749B2
    公开(公告)日: 2004-10-26
  • 发明人: Katsuyuki MoriiTakashi Masuda
  • 申请人: Katsuyuki MoriiTakashi Masuda
  • 优先权: JP2001-313226 20011010; JP2001-313228 20011010; JP2001-313229 20011010; JP2001-313230 20011010; JP2001-313231 20011010; JP2001-313232 20011010; JP2002-295159 20021008; JP2002-295160 20021008; JP2002-295161 20021008; JP2002-295162 20021008; JP2002-295163 20021008; JP2002-295164 20021008
  • 主分类号: B05D500
  • IPC分类号: B05D500
Thin film forming method, solution and apparatus for use in the method, and electronic device fabricating method
摘要:
The present invention provides a method that is capable of crystallizing a very small amount of solution arranged on a substrate at a predetermined position. By ejecting a solution prepared by dissolving a thin film forming material in a solvent using an ink jet method, droplets of the solution are arranged on the substrate. Crystalline nuclei are created in the solution by controlling a partial pressure of a gas made up of the same components as those of the solvent in the vicinity of the droplets immediately after being arranged to, e.g., a value equal to or substantially equal to the saturation vapor pressure. After creation of the crystalline nuclei, the partial pressure of the gas in the vicinity of the droplets is reduced.
信息查询
0/0