发明授权
US06808758B1 Pulse precursor deposition process for forming layers in semiconductor devices 有权
用于在半导体器件中形成层的脉冲前体沉积工艺

  • 专利标题: Pulse precursor deposition process for forming layers in semiconductor devices
  • 专利标题(中): 用于在半导体器件中形成层的脉冲前体沉积工艺
  • 申请号: US09590464
    申请日: 2000-06-09
  • 公开(公告)号: US06808758B1
    公开(公告)日: 2004-10-26
  • 发明人: Randhir P. S. Thakur
  • 申请人: Randhir P. S. Thakur
  • 主分类号: C23C16455
  • IPC分类号: C23C16455
Pulse precursor deposition process for forming layers in semiconductor devices
摘要:
A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precursor fluid is converted into a solid which forms a layer on the substrate. In accordance with the present invention, the precursor fluid is pulsed into the process chamber in a manner such that the fluid is completly exhausted or removed from the chamber in between each pulse. Light energy can be used in forming the solid layers.
信息查询
0/0