发明授权
US06808758B1 Pulse precursor deposition process for forming layers in semiconductor devices
有权
用于在半导体器件中形成层的脉冲前体沉积工艺
- 专利标题: Pulse precursor deposition process for forming layers in semiconductor devices
- 专利标题(中): 用于在半导体器件中形成层的脉冲前体沉积工艺
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申请号: US09590464申请日: 2000-06-09
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公开(公告)号: US06808758B1公开(公告)日: 2004-10-26
- 发明人: Randhir P. S. Thakur
- 申请人: Randhir P. S. Thakur
- 主分类号: C23C16455
- IPC分类号: C23C16455
摘要:
A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precursor fluid is converted into a solid which forms a layer on the substrate. In accordance with the present invention, the precursor fluid is pulsed into the process chamber in a manner such that the fluid is completly exhausted or removed from the chamber in between each pulse. Light energy can be used in forming the solid layers.
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