发明授权
- 专利标题： Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
- 专利标题（中）： 蓝宝石单晶，使用与基板相同的半导体激光二极管及其制造方法
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申请号： US08808315申请日： 1997-02-28
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公开(公告)号： US06809010B1公开(公告)日： 2004-10-26
- 发明人: Hiroyuki Kinoshita , Motohiro Umehara
- 申请人： Hiroyuki Kinoshita , Motohiro Umehara
- 优先权： JP8-043862 19960229; JP8-043863 19960229
- 主分类号： H01L2178
- IPC分类号： H01L2178
摘要：
The present invention relates to a sapphire monocrystalline body to be used as the substrate for a semiconductor for electronic parts or component parts, and to a monocrystalline sapphire substrate. The invention also relates to a method for working the same. The invention is based cleavage along the plane R of the sapphire monocrystalline body which cleavage is easy to accomplish and provides a surface high in precision. The inventive process includes forming linear crack parallel or vertical to a reference plane of the substrate, with a microcrack line as a starting point, to develop a crack in a thickness direction of the body.
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