发明授权
- 专利标题: Flash memory structure using sidewall floating gate
- 专利标题(中): 闪存结构采用侧壁浮栅
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申请号: US09756177申请日: 2001-01-09
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公开(公告)号: US06809372B2公开(公告)日: 2004-10-26
- 发明人: Jeffrey P. Gambino , Louis L. Hsu , Jack A. Mandelman , Donald C. Wheeler
- 申请人: Jeffrey P. Gambino , Louis L. Hsu , Jack A. Mandelman , Donald C. Wheeler
- 主分类号: H01L29788
- IPC分类号: H01L29788
摘要:
A flash memory and a method of forming a flash memory, includes forming a polysilicon wordline on a substrate, the wordline having first and second sidewalls, the first sidewall being tapered, with respect to a surface of the substrate, to have a slope angle and the second sidewall having a slope angle greater than the slope angle of the first sidewall. Thereafter, a polysilicon spacer is formed on the second sidewall while simultaneously removing the polysilicon on the first sidewall. The polysilicon spacer forms a floating gate which is surrounded on a plurality of sides by the second sidewall.