A nonvolatile reprogrammable switch for use in a PLD or FPGA has a nonvolatile memory cell connected to the gate of an MOS transistor, which is in a well, with the terminals of the MOS transistor connected to the source of the signal and to the circuit. The nonvolatile memory cell is of a split gate type having a first region and a second region, with a channel therebetween. The cell has a floating gate positioned over a first portion of the channel, which is adjacent to the first region and a control gate positioned over a second portion of the channel, which is adjacent to the second region. The second region is connected to the gate of the MOS transistor. The cell is programmed by injecting electrons from the channel onto the floating gate by hot electron injection mechanism. The cell is erased by Fowler-Nordheim tunneling of the electrons from the floating gate to the control gate. As a result, no high voltage is ever applied to the second region during program or erase. In addition, a MOS FET transistor has a terminal connected to the well, and another end to a voltage source, with the gate connected to the non-volatile memory cell. The switch also has a circuit element connecting the gate of the MOS transistor to a voltage source. The threshold voltage of the well can be dynamically changed by turning on/off the MOS FET transistor.