发明授权
US06809961B2 Regulation method for the drain, body and source terminals voltages in a non-volatile memory cell during a program phase and corresponding program circuit
有权
在程序阶段和对应的程序电路期间，非易失性存储单元中的漏极，体和源端子电压的调节方法
- 专利标题： Regulation method for the drain, body and source terminals voltages in a non-volatile memory cell during a program phase and corresponding program circuit
- 专利标题（中）： 在程序阶段和对应的程序电路期间，非易失性存储单元中的漏极，体和源端子电压的调节方法
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申请号： US10331116申请日： 2002-12-27
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公开(公告)号： US06809961B2公开(公告)日： 2004-10-26
- 发明人: Rino Micheloni , Sabina Mognoni , Ilaria Motta , Andrea Sacco
- 申请人： Rino Micheloni , Sabina Mognoni , Ilaria Motta , Andrea Sacco
- 优先权： EP01830833 20011228
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
A method and program-load circuit is for regulating the voltages at the drain and body terminals of a non-volatile memory cell being programmed. These voltages are applied from a program-load circuit connected in a conduction pattern to transfer a predetermined voltage value to at least one terminal of the memory cell. The method includes a step of regulating the voltage value locally, within the program-load circuit, to overcome the effect of a parasitic resistor present in the conduction pattern.
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