- 专利标题： Methods of sensing a programmed state of a floating-gate memory cell
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申请号： US10717147申请日： 2003-11-19
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公开(公告)号： US06813190B2公开(公告)日： 2004-11-02
- 发明人: Giulio G. Marotta , Tommaso Vali
- 申请人： Giulio G. Marotta , Tommaso Vali
- 优先权： ITRM2001A0001 20010103
- 主分类号： G11C1606
- IPC分类号： G11C1606
摘要：
Methods of sensing the programmed state of a floating-gate memory cell utilize a reference current applied to an input node of a sensing device during sensing, thus compensating for residual current and improving immunity to erroneous indications of an erased state.
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