发明授权
US06813696B2 Semiconductor memory device and method of controlling the same 有权
半导体存储器件及其控制方法

  • 专利标题: Semiconductor memory device and method of controlling the same
  • 专利标题(中): 半导体存储器件及其控制方法
  • 申请号: US10694982
    申请日: 2003-10-29
  • 公开(公告)号: US06813696B2
    公开(公告)日: 2004-11-02
  • 发明人: Tatsuya KandaHiroyoshi Tomita
  • 申请人: Tatsuya KandaHiroyoshi Tomita
  • 优先权: JP10-269719 19980924; JP109287992 19981009; JP10-336708 19981127
  • 主分类号: G06F1200
  • IPC分类号: G06F1200
Semiconductor memory device and method of controlling the same
摘要:
The present invention relates to a SDRAM and its control method which write or read data in synchronization with the external clock and its object is to provide a semiconductor memory device and its method which can be easily tested and evaluated by the conventional memory test equipment having a transfer type which transfers the data in synchronization with the rising and falling edges of the external clock. The semiconductor memory device has a write amplifier control section 14 and I/O data buffer/register 22 as a data transfer circuit corresponding to the data transfer type for the DDR type and SDR type. Also, a mode register 28 is formed to be used as a switch signal to switch the data transfer circuit to either DDR type or SDR type.
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