发明授权
US06813735B1 I/O based column redundancy for virtual ground with 2-bit cell flash memory 有权
具有2位单元闪存的虚拟地址的基于I / O的列冗余

  • 专利标题: I/O based column redundancy for virtual ground with 2-bit cell flash memory
  • 专利标题(中): 具有2位单元闪存的虚拟地址的基于I / O的列冗余
  • 申请号: US09676623
    申请日: 2000-10-02
  • 公开(公告)号: US06813735B1
    公开(公告)日: 2004-11-02
  • 发明人: Kazuhiro KuriharaPau-Ling Chen
  • 申请人: Kazuhiro KuriharaPau-Ling Chen
  • 主分类号: G11C2900
  • IPC分类号: G11C2900
I/O based column redundancy for virtual ground with 2-bit cell flash memory
摘要:
The present invention discloses methods and systems of accomplishing I/O-based redundancy for a memory device that includes two-bit memory cells. The memory device includes a core two-bit memory cell array and a redundant two-bit memory cell array. The configuration of the core two-bit memory cell array is non-uniform such that the two-bit memory cells therein are not arranged in a sequential order. Due to the non-uniform configuration, I/O based redundancy is accomplished by decoding the addresses with a redundant Y-decoder circuit and translating the addresses using an address translation circuit. The translated addresses identify the location of the two-bit memory cells within the non-uniform core two-bit memory cell array. The decoding of the addresses configures the redundant two-bit memory cell array to provide a configuration that matches the two-bit memory cells in the location identified by the translated address.
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