发明授权
US06813735B1 I/O based column redundancy for virtual ground with 2-bit cell flash memory
有权
具有2位单元闪存的虚拟地址的基于I / O的列冗余
- 专利标题: I/O based column redundancy for virtual ground with 2-bit cell flash memory
- 专利标题(中): 具有2位单元闪存的虚拟地址的基于I / O的列冗余
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申请号: US09676623申请日: 2000-10-02
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公开(公告)号: US06813735B1公开(公告)日: 2004-11-02
- 发明人: Kazuhiro Kurihara , Pau-Ling Chen
- 申请人: Kazuhiro Kurihara , Pau-Ling Chen
- 主分类号: G11C2900
- IPC分类号: G11C2900
摘要:
The present invention discloses methods and systems of accomplishing I/O-based redundancy for a memory device that includes two-bit memory cells. The memory device includes a core two-bit memory cell array and a redundant two-bit memory cell array. The configuration of the core two-bit memory cell array is non-uniform such that the two-bit memory cells therein are not arranged in a sequential order. Due to the non-uniform configuration, I/O based redundancy is accomplished by decoding the addresses with a redundant Y-decoder circuit and translating the addresses using an address translation circuit. The translated addresses identify the location of the two-bit memory cells within the non-uniform core two-bit memory cell array. The decoding of the addresses configures the redundant two-bit memory cell array to provide a configuration that matches the two-bit memory cells in the location identified by the translated address.
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