发明授权
US06815336B1 Planarization of copper damascene using reverse current electroplating and chemical mechanical polishing 有权
使用反电流电镀和化学机械抛光对铜镶嵌进行平面化

  • 专利标题: Planarization of copper damascene using reverse current electroplating and chemical mechanical polishing
  • 专利标题(中): 使用反电流电镀和化学机械抛光对铜镶嵌进行平面化
  • 申请号: US09160965
    申请日: 1998-09-25
  • 公开(公告)号: US06815336B1
    公开(公告)日: 2004-11-09
  • 发明人: Shau-Lin ShueSyun-Ming Jang
  • 申请人: Shau-Lin ShueSyun-Ming Jang
  • 主分类号: H01L214763
  • IPC分类号: H01L214763
Planarization of copper damascene using reverse current electroplating and chemical mechanical polishing
摘要:
Methods are disclosed to improve the planarization of copper damascene by the steps of patterning on the copper damascene a photoresist using a reverse tone photo mask or a reverse tone photo mask of the metal lines, removing excess copper by reverse current plating or by dry or wet chemical etching, stripping the photo resist, and a subsequent chemical mechanical planarization of the copper damascene. Lastly a cap layer is applied to the planarized surface. In a variant of the disclosed method a more relaxed reverse tone photo mask of the metal lines is used, which may be more desirable for practical use. These steps provide benefits such as improved uniformity of the wafer surface, reduce the dishing of metal lines (trenches) and pads, and reduce oxide erosion.
信息查询
0/0