发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US10311267申请日: 2002-12-13
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公开(公告)号: US06815735B2公开(公告)日: 2004-11-09
- 发明人: Akira Inoue , Takeshi Takagi , Yoshihiro Hara , Minoru Kubo
- 申请人: Akira Inoue , Takeshi Takagi , Yoshihiro Hara , Minoru Kubo
- 优先权: JP2001-119586 20010418
- 主分类号: H01L310328
- IPC分类号: H01L310328
摘要:
A semiconductor layer 30 of a graded SiGe-HDTMOS is constructed of an upper Si film 12, an Si buffer layer 13, an Si1−xGex film 14 and an Si cap layer 15. The region between a source region 20a and drain region 20b of the semiconductor layer 30 includes a high concentration n-type Si body region 22 and an n Si region 23, an Si cap region 25 and an SiGe channel region 24. A Ge composition ratio x of the Si1−xGex film 14 is made to increase from the Si buffer layer 13 to the Si cap layer 15. For the p-type HDTMOS, the electron current component of the substrate current decreases.
公开/授权文献
- US20030146473A1 Semiconductor device 公开/授权日:2003-08-07